Ab initio molecular dynamics simulation of laser melting of silicon

Publication date

1996

Authors

Silvestrelli, P.-L.
Alavi, A.
Parrinello, M.
Frenkel, D.

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Abstract

The method of ab initio molecular dynamics, based on finite temperature density functional theory, is used to simulate laser heating of crystal silicon. We have found that a high concentration of excited electrons dramatically weakens the covalent bond. As a result, the system undergoes a melting transition to a metallic state. In contrast to ordinary liquid silicon, the new liquid is characterized by a high coordination number and a strong reduction of covalent bonding effects.

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