Doping dependence of the electronic structure of Ba12xKxBiO3 studied by x-ray-absorption spectroscopy
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Publication date
1999-06-15
Authors
Kobayashi, K.
Mizokawa, T.
Ino, A.
Matsuno, J.
Fujimori, A.
Samata, H.
Mishiro, A.
Nagata, Y.
Groot, F.M.F. de
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Abstract
We have performed x-ray-absorption spectroscopy (XAS) and x-ray-photoemission spectroscopy ~XPS!
studies of single crystal Ba12xKxBiO3 (BKBO) covering the whole composition range 0<x<0.60. Several
features in the oxygen 1s core XAS spectra show systematic changes with x. Spectral weight around the
absorption threshold increases with hole doping and shows a finite jump between x=0.30 and 0.40, which
signals the metal-insulator transition. We have compared the obtained results with band-structure calculations.
Comparison with the XAS results of BaPb1-xBixO3 has revealed quite different doping dependences between
BKBO and BPBO. We have also observed systematic core-level shifts in the XPS spectra as well as in the
XAS threshold as functions of x, which can be attributed to a chemical potential shift accompanying the hole
doping. The observed chemical potential shift is found to be slower than that predicted by the rigid band model
based on the band-structure calculations.