Influence of chemical additives on the surface reactivity of Si in KOH solution
Files
Publication date
2009
Authors
Philipsen, H.G.G.
Kelly, John
Editors
Advisors
Supervisors
DOI
Document Type
Article
Metadata
Show full item recordCollections
License
Abstract
It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions.
Keywords
Citation
Philipsen, H G G & Kelly, J J 2009, 'Influence of chemical additives on the surface reactivity of Si in KOH solution', Electrochimica Acta, vol. 54, no. 13, pp. 3526-3531.