High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon
Publication date
2011
Authors
Schuttauf, J.A.
van der Werf, C.H.M.
Kielen, I.M.
van Sark, W. G.J.H.M.
Rath, J.K.
Editors
Advisors
Supervisors
Document Type
Article
Metadata
Show full item recordCollections
License
Abstract
We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased dangling bond density. Due to the combined chemical and field effect passivation of the intrinsic/n-type a-Si:H layer stack, we obtained minority carrier lifetimes with a value as high as 13.3 ms at an injection level of 1015 cm 3. For higher annealing temperatures, a decreased passivation quality is observed, which is attributed to hydrogen effusion.
Keywords
Citation
Schuttauf, J A, van der Werf, C H M, Kielen, I M, van Sark, W G J H M & Rath, J K 2011, 'High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon', Applied Physics Letters, vol. 99, no. 20, pp. 203503/1-203503/4. https://doi.org/10.1063/1.3662404