Inversion-symmetry protected chiral hinge states in stacks of doped quantum Hall layers

Publication date

2018-12-03

Authors

Kooi, S. H.ISNI 0000000493300984
Miert, Guido vanISNI 0000000527843574
Ortix, CarmineISNI 0000000352785682

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Article
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Abstract

We prove the existence of higher-order topological insulators with protected chiral hinge modes in quasi-two-dimensional systems made out of coupled layers stacked in an inversion-symmetric manner. In particular, we show that a homogeneous external magnetic field slightly tilted away from the stacking direction drives alternating p- and n-doped honeycomb sheets into a higher-order topological phase, characterized by a nontrivial three-dimensional Z2 invariant. We identify graphene, silicene, and phosphorene multilayers as potential material platforms for the experimental detection of this second-order topological insulating phase.

Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Citation

Kooi, S H, Van Miert, G & Ortix, C 2018, 'Inversion-symmetry protected chiral hinge states in stacks of doped quantum Hall layers', Physical Review B, vol. 98, no. 24, 245102. https://doi.org/10.1103/PhysRevB.98.245102