Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC
Publication date
2009
Authors
van Dorp, D.H.
den Otter, J.H.
Hijnen, N.
Bergmeijer, M.
Kelly, John
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Abstract
The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.
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van Dorp, D H, den Otter, J H, Hijnen, N, Bergmeijer, M & Kelly, J J 2009, 'Influence of electrochemical etching on electroluminescence from n-type 4H- and 6H-SiC', Electrochemical and Solid-State Letters, vol. 12, no. 6, pp. D49-D52.