Photoelectrochemistry and Etching of SiC: a Comparison with Si
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Publication date
2007
Authors
Kelly, J.J.
van Dorp, D.H.
Weyher, J.L.
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Abstract
The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.
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Kelly, J J, van Dorp, D H & Weyher, J L 2007, 'Photoelectrochemistry and Etching of SiC: a Comparison with Si', ECS Transactions, vol. 6, no. 2, pp. 513-524.