Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
Publication date
2020-09-10
Authors
Ross, Andrew
Lebrun, Romain
Ulloa, Camilo
Grave, Daniel A.
Kay, Asaf
Baldrati, Lorenzo
Kronast, Florian
Valencia, Sergio
Rothschild, Avner
Klaeui, Mathias
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Abstract
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α−Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.
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Ross, A, Lebrun, R, Ulloa, C, Grave, D A, Kay, A, Baldrati, L, Kronast, F, Valencia, S, Rothschild, A & Klaeui, M 2020, 'Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films', Physical Review B, vol. 102, no. 9, 094415 , pp. 1-6. https://doi.org/10.1103/PhysRevB.102.094415