Reentrant topological phases in Mn-doped HgTe quantum wells

Publication date

2012

Authors

Beugeling, W.ISNI 0000000387245467
Liu, C.X.
Novik, E.G.
Molenkamp, L.W.
Smith, C. MoraisISNI 0000000394433837

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Article
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Abstract

Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model

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Citation

Beugeling, W, Liu, C X, Novik, E G, Molenkamp, L W & de Morais Smith, C 2012, 'Reentrant topological phases in Mn-doped HgTe quantum wells', Physical Review B - Condensed Matter and Materials Physics, vol. 85, no. 19, 195304, pp. 1-8. https://doi.org/10.1103/PhysRevB.85.195304