Growth properties of GaSb: The structure of the residual acceptor centres

Abstract

A study was made of the influence of direction of growth, melt composition and growth speed upon the relative occurrence of the residual acceptor centres in melt-grown GaSb single crystals. Special attention was given to effects arising from the fact that the solid-liquid interface can be more or less faceted during growth. Crystal growth in the [111] direction was found to be different from growth in the [111] direction. In the discussion the possibility of a simple defect centre is ruled out and it is shown that of the more complex centres the GaSbVGaa centre fits the present data best.