Optoelectronic Properties of Ternary I-III-VI2 Semiconductor Nanocrystals: Bright Prospects with Elusive Origins

Publication date

2019

Authors

Berends, Anne C.ORCID 0000-0003-4249-2843ISNI 0000000492512213
Mangnus, Mark J.J.ISNI 0000000492816217
Xia, ChenghuiISNI 0000000492960470
Rabouw, Freddy T.ISNI 0000000492491619
de Mello Donegá, C.ISNI 0000000390738326

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Abstract

Colloidal nanocrystals of ternary I–III–VI2 semiconductors are emerging as promising alternatives to Cd- and Pb-chalcogenide nanocrystals because of their inherently lower toxicity, while still offering widely tunable photoluminescence. These properties make them promising materials for a variety of applications. However, the realization of their full potential has been hindered by both their underdeveloped synthesis and the poor understanding of their optoelectronic properties, whose origins are still under intense debate. In this Perspective, we provide novel insights on the latter aspect by critically discussing the accumulated body of knowledge on I–III–VI2 nanocrystals. From our analysis, we conclude that the luminescence in these nanomaterials most likely originates from the radiative recombination of a delocalized conduction band electron with a hole localized at the group-I cation, which results in broad bandwidths, large Stokes shifts, and long exciton lifetimes. Finally, we highlight the remaining open questions and propose experiments to address them.

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Berends, A C, Mangnus, M J J, Xia, C, Rabouw, F T & de Mello-Donega, C 2019, 'Optoelectronic Properties of Ternary I-III-VI2 Semiconductor Nanocrystals: Bright Prospects with Elusive Origins', Journal of Physical Chemistry Letters, vol. 10, pp. 1600–1616. https://doi.org/10.1021/acs.jpclett.8b03653