Flicker noise of hot holes in silicon at 78 K

Abstract

From flicker-noise data versus applied voltage and current-voltage measurements on a p+πp+ planar silicon device at 78 K we calculated Hooge's parameter α for flicker noise as a function of the electric field strength E0 applied along the 1, 0, 0 crystallographic direction. We found that α(E0) decreases with increasing field. For E0 3 × 104 V/m the following relation holds: α(E0) = α(0)/[1 + (E0/Ecℓ)2]. Ecℓ is the field where the drift velocity of the light holes is within 10% of the sound velocity. This particular α(E0) dependence indicates the connection between α(E0) and the scattering of light holes by acoustic phonons.