Thermal annealing of protocrystalline a-Si:H

Abstract

It proves difficult to obtain a set of protocrystalline silicon materials with different characteristics from the same deposition chamber to study the exact nature of these transition region materials. Hot-wire deposited protocrystalline silicon was thus isochronically annealed at different temperatures to investigate the bonded hydrogen configurations and structural disorder. Modeling of optical reflection and transmission spectra with Scout® yielded the optical parameters and infrared spectroscopy confirms that bonded hydrogen remains in the material, with the exception of a longer anneal of six hours at 520 °C. Sub bandgap absorption as inferred from photothermal deflection spectroscopy was related to these characteristics.