Entropy-driven formation of binary semiconductor-nanocrystal superlattices

Publication date

2010-10-13

Authors

Evers, W.H.
de Nijs, B.ISNI 0000000419455582
Filion, LauraISNI 0000000387851600
Castillo, Sonja I.R.ISNI 0000000505973431
Dijkstra, MarjoleinISNI 0000000358257928
Vanmaekelbergh, D.A.M.ISNI 0000000394482321

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Abstract

One of the main reasons for the current interest in colloidal nanocrystals is their propensity to form superlattices, systems in which (different) nanocrystals are in close contact in a well-ordered three-dimensional (3D) geometry resulting in novel material properties. However, the principles underlying the formation of binary nanocrystal superlattices are not well understood. Here, we present a study of the driving forces for the formation of binary nanocrystal superlattices by comparing the formed structures with full free energy calculations. The nature (metallic or semiconducting) and the size-ratio of the two nanocrystals are varied systematically. With semiconductor nanocrystals, self-organization at high temperature leads to superlattices (AlB2, NaZn13, MgZn2) in accordance with the phase diagrams for binary hard-sphere mixtures; hence entropy increase is the dominant driving force. A slight change of the conditions results in structures that are energetically stabilized. This study provides rules for the rational design of 3D nanostructured binary semiconductors, materials with promises in thermoelectrics and photovoltaics and which cannot be reached by any other technology

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Evers, W H, De NIjs, B, Filion, L C, Castillo, S I R, Dijkstra, M & Vanmaekelbergh, D A M 2010, 'Entropy-driven formation of binary semiconductor-nanocrystal superlattices', Nano Letters, vol. 10, no. 10, pp. 4235-4241. https://doi.org/10.1021/nl102705p