P-Band Engineering in Artificial Electronic Lattices

Publication date

2019-01-16

Authors

Slot, M. R.ISNI 0000000507443178
Kempkes, S. N.ISNI 0000000523925097
Knol, E. J.
Van Weerdenburg, W. M.J.
Van Den Broeke, J. J.ISNI 0000000492796404
Wegner, D.
Vanmaekelbergh, D.ISNI 0000000394482321
Khajetoorians, A. A.
Morais Smith, C.ISNI 0000000394433837
Swart, IngmarORCID 0000-0003-3201-7301ISNI 0000000390199991

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Abstract

Artificial electronic lattices, created atom by atom in a scanning tunneling microscope, have emerged as a highly tunable platform to realize and characterize the lowest-energy bands of novel lattice geometries. Here, we show that artificial electronic lattices can be tailored to exhibit higher-energy bands. We study p-like bands in fourfold and threefold rotationally symmetric lattices. In addition, we show how an anisotropic design can be used to lift the degeneracy between p x-and p y-like bands. The experimental measurements are corroborated by muffin-tin and tight-binding calculations. The approach to engineer higher-energy electronic bands in artificial quantum systems introduced here enables the realization of complex band structures from the bottom up.

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Slot, M R, Kempkes, S N, Knol, E J, Van Weerdenburg, W M J, Van Den Broeke, J J, Wegner, D, Vanmaekelbergh, D, Khajetoorians, A A, Morais Smith, C & Swart, I 2019, 'P-Band Engineering in Artificial Electronic Lattices', Physical Review X, vol. 9, no. 1, 011009. https://doi.org/10.1103/PhysRevX.9.011009