Flicker noise of hot electrons in silicon at T = 78 K

Abstract

From flicker-noise and current-voltage measurements performed on an n+nn+ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E0. We found that α(E0) = α(0)/[1 + (E0/Ec)2]. Ec is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering.