Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor

Publication date

2017-09-13

Authors

Alimoradi Jazi, MaryamISNI 0000000493352389
Janssen, V A E C
Evers, Wiel H.
Tadjine, A
Delerue, ChristopheISNI 0000000114693352
Siebbeles, Laurens D A
Van Der Zant, Herre S. J.
Houtepen, A.J.
Vanmaekelbergh, DanielISNI 0000000394482321

Editors

Advisors

Supervisors

Document Type

Article
Open Access logo

License

Abstract

Self-assembled nanocrystal solids show promise as a versatile platform for novel optoelectronic materials. Superlattices composed of a single layer of lead-chalcogenide and cadmium-chalcogenide nanocrystals with epitaxial connections between the nanocrystals, present outstanding questions to the community regarding their predicted band structure and electronic transport properties. However, the as-prepared materials are intrinsic semiconductors; to occupy the bands in a controlled way, chemical doping or external gating is required. Here, we show that square superlattices of PbSe nanocrystals can be incorporated as a nanocrystal monolayer in a transistor setup with an electrolyte gate. The electron (and hole) density can be controlled by the gate potential, up to 8 electrons per nanocrystal site. The electron mobility at room temperature is 18 cm2/(V s). Our work forms a first step in the investigation of the band structure and electronic transport properties of two-dimensional nanocrystal superlattices with controlled geometry, chemical composition, and carrier density.

Keywords

2D superstructure, electrolyte gating, optoelectrical characterization, oriented attachment, self-assembly

Citation

Alimoradi Jazi, M, Janssen, V A E C, Evers, W H, Tadjine, A, Delerue, C, Siebbeles, L D A, Van Der Zant, H S J, Houtepen, A J & Vanmaekelbergh, D 2017, 'Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor', Nano Letters, vol. 17, no. 9, pp. 5238-5243. https://doi.org/10.1021/acs.nanolett.7b01348