Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime
Publication date
2010-09-06
Authors
Schuttauf, J.A.
van der Werf, C.H.M.
Bommel, C.O.
Huijzer, M.J.
van Sark, Wilfried
Rath, J. K.
Schropp, R.E.I.
Editors
de Santi, G.F.
Ossenbrink, H.
Helm, P.
Advisors
Supervisors
Document Type
Part of book
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Taverne
Citation
Schuttauf, J A, van der Werf, C H M, Bommel, C O, Huijzer, M J, van Sark, W G J H M, Rath, J K & Schropp, R E I 2010, Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. in G F de Santi, H Ossenbrink & P Helm (eds), Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010. WIP-Renewable Energies, Munich, pp. 1114-1117. https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2