Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence
Publication date
2019-03-08
Authors
Khanin, Vasilii
Venevtsev, I.
Chernenko, K.
Rodnyi, P.
van Swieten, Thomas P.
Spoor, S.
Boerekamp, J.
Wieczorek, H.
Vrubel, I.
Meijerink, Andries
Editors
Advisors
Supervisors
Document Type
Article
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taverne
Abstract
The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu 1 Gd 2 Ga 3 Al 2 O 12 :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd) 3 (Ga,Al) 5 O 12 compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.
Keywords
Complex garnets, Impurity-related traps, Thermal trap depth, Thermally stimulated luminescence, Taverne
Citation
Khanin, V, Venevtsev, I, Chernenko, K, Rodnyi, P, van Swieten, T, Spoor, S, Boerekamp, J, Wieczorek, H, Vrubel, I, Meijerink, A & Ronda, C 2019, 'Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence', Journal of Luminescence, vol. 211, pp. 48-53. https://doi.org/10.1016/j.jlumin.2019.03.013