Experiments and simulations for artificial electronic lattices

Publication date

2022-04-19

Authors

Gardenier, Thomas Stuart

Editors

Advisors

Vanmaekelbergh, D.A.M.
Swart, I.

Supervisors

Document Type

Dissertation
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License

Abstract

Electronic devices are becoming smaller and more precise. The smallest parts are now only a few nanometers wide. At this scale, the largest losses occur due to scattering resistance of electrons with the host material. By changing the crystal lattice in which the electrons travel, this resistance can be reduced. To achieve this we perform fundamental research on the behavior of electrons in their specific atomic surroundings. We use a scanning tunneling microscope (STM) to see, move and measure individual atoms and molecules. We place molecules and atoms in intricate patterns forming engineered lattices, and measure the electronic properties. By playing with the spacing and position of molecules on a copper surface, we can force the electrons to be at higher or lower energies.

Keywords

scanning tunneling microscopy, scanning tunneling spectroscopy, honeycomb, orbital, machine learning, InAs, Cu(111), artificial lattices, artificial atoms, magnetic field

Citation