Experiments and simulations for artificial electronic lattices
Publication date
2022-04-19
Authors
Gardenier, Thomas Stuart
Editors
Advisors
Vanmaekelbergh, D.A.M.
Swart, I.
Supervisors
Document Type
Dissertation
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Abstract
Electronic devices are becoming smaller and more precise. The smallest parts are now only a few nanometers wide. At this scale, the largest losses occur due to scattering resistance of electrons with the host material. By changing the crystal lattice in which the electrons travel, this resistance can be reduced. To achieve this we perform fundamental research on the behavior of electrons in their specific atomic surroundings. We use a scanning tunneling microscope (STM) to see, move and measure individual atoms and molecules. We place molecules and atoms in intricate patterns forming engineered lattices, and measure the electronic properties. By playing with the spacing and position of molecules on a copper surface, we can force the electrons to be at higher or lower energies.
Keywords
scanning tunneling microscopy, scanning tunneling spectroscopy, honeycomb, orbital, machine learning, InAs, Cu(111), artificial lattices, artificial atoms, magnetic field